FRIB Single-Event-Effects facilities

FRIB’s facilities, including the FRIB Single-Event-Effects Facility (FSEE) and the under-development K500 Chip Testing Facility (KSEE), are essential in addressing the national shortage of testing capacity for advanced microelectronics used in industries like spaceflight, wireless technology, and autonomous vehicles.

The FRIB Single-Event-Effects (FSEE) Facility was established by the U.S. Department of Defense and provides U.S.-based users with heavy ion beams, accurate characterization of beam parameters and linear energy transfers (LETs), easy-to-use controls, and prompt reporting of dosimetry results.

When it comes online in 2025, the K500 Chip Testing Facility will help address the current national shortage in testing capacity for advanced microelectronics, including those used in commercial spaceflight, wireless technology, and autonomous vehicles.

FSEE beam list and ion cocktails

Utilizing FRIB's state-of-the-art linear accelerator, the SEE facilities let users fulfill an extensive range of experimental needs. Below is the current beam list and ion cocktails offered by the FSEE Facility. Additional ion species and cocktails are also in development at this time.

FSEE available beam list (updated July 2024)

Ion range & linear energy transfer (updated July 2024)

The FSEE Facility has a dedicated beamline built on the FRIB linac infrastructure. A user experimental station is established at the end of the FSEE beamline. A thin vacuum window defines the exposure area of the beam (1-inch diameter). A 4-degree-of-freedom stage allows for samples to be mounted and accurately positioned. A user control room is located nearby which houses robust industrial software controls, control for device presentation to the beam, and real-time monitoring of dose statistics.